HMT325S6CFR8C Datasheet, PDF (4/48 Pages) Hynix Semiconductor – DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb C-die

Key Parameters
MT/s
DDR3-1066
DDR3-1333
DDR3-1600
Grade
-G7
-H9
-PB
tCK
(ns)
1.875
1.5
1.25
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
7
13.125 13.125 37.5 50.625
7-7-7
9
13.5
13.5
(13.125)* (13.125)*
36
49.5
(49.125)*
9-9-9
11
13.75 13.75
(13.125)* (13.125)*
35
48.75
(48.125)*
11-11-11
*SK hynix DRAM devices support optional downbinning to CL11, CL9 and CL7. SPD setting is programmed
to match.
Speed Grade
Grade
CL5
CL6
-G7
667
800
-H9
667
800
-PB
667
800
Address Table
Refresh Method
Row Address
Column Address
Bank Address
Page Size
Frequency [MHz]
CL7
1066
1066
1066
CL8
1066
1066
1066
CL9
1333
1333
CL10
1333
1333
2GB(1Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
CL11
Remark
1600
4GB(2Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
Rev. 1.0/Sep. 2012
4