HY5DU28422ET Datasheet, PDF (27/35 Pages) Hynix Semiconductor – 128Mb DDR SDRAM

HY5DU28422ET
HY5DU28822ET
HY5DU281622ET
AC Overshoot/Undershoot Specification for Address and Control Pins
This specification is intended for devices with no clamp protection and is guaranteed by design
Parameter
Specification
DDR333 DDR200/266
Maximum peak amplitude allowed for overshoot (See Figure 1):
1.5V
1.5V
Maximum peak amplitude allowed for undershoot (See Figure 1):
1.5V
1.5V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 1): 4.5V - ns
4.5V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 1): 4.5V - ns
4.5V - ns
5
4
3
2
1
Max. area = 4.5V-ns
0
-1
-2
-3
0
1
2
Max. amplitude = 1.5V
Overshoot
VDD
GND
Undershoot
3
4
5
6
Time(ns)
Figure 1: Address and Control AC Overshoot and Undershoot Definition
Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR333 DDR200/266
Maximum peak amplitude allowed for overshoot (See Figure 2):
1.2V
1.2V
Maximum peak amplitude allowed for undershoot (See Figure 2):
1.2V
1.2V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 2): 2.4V - ns
2.4V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 2): 2.4V - ns
2.4V - ns
5
4
3
2
1
Max. area = 2.4V-ns
0
-1
-2
-3
0
1
2
Max. amplitude = 1.2V
Overshoot
VDD
GND
Undershoot
3
4
5
6
Time(ns)
Figure 2: DQ/DM/DQS AC Overshoot and Undershoot Definition
Rev. 0.5 /Apr. 2006
27