HY5DV641622AT Datasheet, PDF (22/27 Pages) Hynix Semiconductor – 64M(4Mx16) DDR SDRAM

HY5DV641622AT
DC CHARACTERISTICS I (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min.
-2
-5
VTT + 0.76
-
Max
2
5
-
VTT - 0.76
Unit
uA
uA
V
V
Note
1
2
IOH = -15.2mA
IOL = +15.2mA
Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN = 0V. 2. DOUT is disabled, VOUT = 0 to 2.7V
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
33 36
4
Unit Note
5
Operating Current
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non Power Down Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down Mode
Burst Mode Operating
Current
Auto Refresh Current
Self Refresh Current
IDD1
Burst length=2, One bank active
tRC ≥ tRC(min), IOL=0mA
150 130 120 100 mA 1
IDD2P CKE ≤ VIL(max), tCK = min
20
mA
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min
IDD2N Input signals are changed one time during 100 90
80
70 mA
2clks
IDD3P CKE ≤ VIL(max), tCK = min
20
mA
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min
IDD3N Input signals are changed one time during 100 90
80
70 mA
2clks
IDD4
tCK ≥ tCK(min), IOL= 0mA
All banks active
250 230 210 190 mA 1
IDD5
tRC ≥ tRFC (min),
All banks active
200
mA 1,2
IDD6 CKE ≤ 0.2V
2
mA
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Rev. 0.7/May. 02
22