H5MS5122DFR Datasheet, PDF (21/62 Pages) Hynix Semiconductor – Mobile DDR SDRAM 512Mbit (16M x 32bit)

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Mobile DDR SDRAM 512Mbit (16M x 32bit)
H5MS5122DFR Series / H5MS5132DFR Series
Mobile DDR OUTPUT SLEW RATE CHARACTERRISTICS
Parameter
Min
Max
Unit
Note
Pull-up and Pull-Down Slew Rate for Full Strength Driver
0.7
2.5
V/ns
1, 2
Pull-up and Pull-Down Slew Rate for Half Strength Driver
0.3
1.0
V/ns
1, 2
Output Slew Rate Matching ratio (Pull-up to Pull-down)
0.7
1.4
-
3
Note:
1. Measured with a test load of 20pF connected to VSSQ
2. Output slew rate for rising edge is measured between VILD(DC) to VIHD(AC) and for falling edge between VIHD(DC) to VILD(AC)
3. The ratio of pull-up slew rate to pull-down slew rate is specified for the same temperature and voltage, over the entire temperature
and voltage range. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process
variation.
Mobile DDR AC OVERSHOOT / UNDERSHOOT SPECIFICATION
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between overshoot signal and VDD must be less than or equal to
The area between undershoot signal and GND must be less than or equal to
Specification
0.5V
0.5V
3V-ns
3V-ns
Note:
1. This specification is intended for devices with no clamp protection and is guaranteed by design.
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
-0.5V
Overshoot
VDD
Max. Amplitude = 0.5V
Max. Area = 3V-ns
VSS
Undershoot
Time (ns)
Rev 1.2 / Jul. 2008
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