H5MS5122DFR Datasheet, PDF (1/62 Pages) Hynix Semiconductor – Mobile DDR SDRAM 512Mbit (16M x 32bit)

512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O
Specification of
512Mb (16Mx32bit) Mobile DDR SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / Jul. 2008
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