HY5PS1G431ALFP Datasheet, PDF (20/36 Pages) Hynix Semiconductor – 1Gb DDR2 SDRAM

3.5. Input/Output Capacitance
HY5PS1G431A(L)FP
HY5PS1G831A(L)FP
HY5PS1G1631A(L)FP
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
DDR2 400
DDR2 533
Min Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
4.0
x
0.5
DDR2 667
DDR2 800
Min Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
3.5
x
0.5
Units
pF
pF
pF
pF
pF
pF
4. Electrical Characteristics & AC Timing Specification
( 0 ℃ ≤ T_CASE ≤ 95℃; V_DDQ = 1.8 +/- 0.1V; V_DD = 1.8 +/- 0.1V)
Refresh Parameters by Device Density
Parameter
Refresh to Active/
Refresh command time
Average periodic
refresh interval
Symbol
tRFC
tREFI
0 ℃≤ T_CASE ≤ 85℃
85℃＜ T_CASE ≤ 95℃
256Mb 512Mb 1Gb 2Gb 4Gb Units
75
105 127.5 195 327.5 ns
7.8
7.8
7.8 7.8 7.8
us
3.9
3.9
3.9 3.9 3.9
us
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Speed
Bin(CL-tRCD-tRP)
Parameter
CAS Latency
tRCD
tRPNote1
tRAS
tRC
DDR2-667
4-4-4
min
4
12
12
45
57
DDR2-533
3-3-3
min
3
11.25
11.25
45
56.25
DDR2-533
4-4-4
min
4
15
15
45
60
DDR2-533
5-5-5
min
5
18.75
18.75
45
63.75
DDR2-400
3-3-3
min
3
15
15
40
55
DDR2-400
4-4-4
min
4
20
20
40
65
Units
tCK
ns
ns
ns
ns
Note 1: 8 bank device Precharge All Allowance : tRP for a Precharge All command for and 8 Bank device will equal to
tRP+1*tCK, where tRP are the values for a single bank Precharge, which are shown in the above table.
Rev. 0.7 / Oct. 2007
20