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HYMP164S64CP6-C4 Datasheet, PDF (19/23 Pages) Hynix Semiconductor – 1200pin Unbuffered DDR2 SDRAM SO-DIMMs
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
Parameter
Symbol
CAS to CAS command delay
tCCD
Write recovery time
tWR
Auto precharge write recovery + precharge
tDAL
time
Internal write to read command delay
tWTR
Internal read to precharge command delay tRTP
Exit self refresh to a non-read command tXSNR
Exit self refresh to a read command
tXSRD
Exit precharge power down to any non-
tXP
read command
Exit active power down to read command tXARD
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
tXARDS
tCKE
ODT turn-on delay
ODT turn-on
tAOND
tAON
ODT turn-on(Power-Down mode)
tAONPD
ODT turn-off delay
ODT turn-off
tAOFD
tAOF
ODT turn-off (Power-Down mode)
tAOFPD
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Average periodic Refresh Interval
tANPD
tAXPD
tOIT
tDelay
tREFI
tREFI
DDR2-667
min
max
2
15
-
WR+tRP
-
7.5
-
7.5
tRFC + 10
-
200
-
2
-
2
-
7 - AL
-
DDR2-800
min
max
2
-
15
-
WR+tRP
-
7.5
-
7.5
-
tRFC + 10
-
200
-
2
-
2
-
8 - AL
-
- continued -
Unit Note
tCK
ns
tCK
ns
ns
ns
tCK
tCK
tCK
tCK
3
-
3
-
tCK
2
tAC(min)
tAC(min)+2
2.5
tAC(min)
tAC(min)+2
3
8
0
2
tAC(max)+0.7
2tCK+
tAC(max)+1
2.5
tAC(max)+ 0.6
2.5tCK+
tAC(max)+1
-
12
2
tAC(min)
tAC(min)+2
2.5
tAC(min)
tAC(min)+2
3
8
0
2
tCK
tAC(max)+0.7 ns
2tCK+
tAC(max)+1
ns
2.5
tCK
tAC(max)+ 0.6 ns
2.5tCK+
tAC(max)+1
ns
-
tCK
tCK
12
ns
tIS+tCK+tIH
-
tIS+tCK+tIH
-
ns
-
7.8
-
7.8
us 2
-
3.9
-
3.9
us 3
Notes:
1. For details and notes, please refer to the relevant Hynix component datasheet(HY5PS1G8(16)31CFP).
2. 0°C ≤ TCASE ≤ 85°C
3. 85°C < TCASE ≤ 95°C
Rev. 1.0 / Dec. 2009
19