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HYMP164S64CP6-C4 Datasheet, PDF (13/23 Pages) Hynix Semiconductor – 1200pin Unbuffered DDR2 SDRAM SO-DIMMs
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
IDD SPECIFICATIONS (TCASE : 0 to 95oC)
512MB, 64M x 64 SO-DIMM : HYMP164S64CP(R)6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6(L)
IDD7
C4
(DDR2 533@CL4)
340
440
40
108
140
80
48
180
640
640
660
40
20
1040
Y5
(DDR2 667@CL5)
360
460
40
120
160
100
48
200
780
780
700
40
20
1060
S5/S6
(DDR2 800@CL5&6)
380
480
40
128
180
100
48
220
900
900
700
40
20
1080
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
mA
1
mA
1GB, 128M x 64 SO-DIMM : HYMP112S64CP(R)6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6(L)
IDD7
C4
(DDR2 533@CL4)
520
620
80
216
280
160
96
360
820
820
840
80
40
1220
Y5
(DDR2 667@CL5)
560
660
80
240
320
200
96
400
980
980
900
80
40
1260
Notes:
1. IDD6 current values are guaranteed up to Tcase of 85°… max.
S5/S6
(DDR2 800@CL5&6)
600
700
80
256
360
200
96
440
1120
1120
920
80
40
1300
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
mA
1
mA
Rev. 1.0 / Dec. 2009
13