HY5PS2G431AMP Datasheet, PDF (18/35 Pages) Hynix Semiconductor – 2Gb DDR2 SDRAM(DDP)

1HY5PS2G431AMP
1HY5PS2G831AMP
3.5. Input/Output Capacitance
Parameter
Symbol
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, single connection input-only pins
Input capacitance delta, single connection input-only pins
Input capacitance, dual connection input-only pins
Input capacitance delta, dual connection input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
CCK
CDCK
CI1
CDI1
CI2
CDI2
CIO
CDIO
DDR2- 400
DDR2- 533
Min Max
3.5
7.5
x 0.375
1.75 3.5
x
0.5
3.25 7.5
x
0.5
5.5 10.5
x
0.75
DDR2 667
Min Max
3.5
7.5
x 0.375
1.75 3.5
x
0.5
3.25 7.5
x
0.5
5.5 10.5
x
0.75
Units
pF
pF
pF
pF
pF
pF
pF
pF
4. Electrical Characteristics & AC Timing Specification
( 0 ℃ ≤ T_CASE ≤ 95℃; V_DDQ = 1.8 V +/- 0.1V; V_DD = 1.8V +/- 0.1V)
Refresh Parameters by Device Density
Parameter
Refresh to Active/Refresh
command time
Symbol
tRFC
256Mb 512Mb 1Gb 2Gb 4Gb Units
75
105 127.5 195 327.5 ns
0 ℃ ≤ T_CASE ≤ 85℃ _7.8
Average periodic refresh interval _tREFI
85℃ < T_CASE ≤ 95℃ _3.9
7.8 7.8 7.8 7.8 us
3.9 3.9 3.9 3.9 us
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Speed
Bin
(CL-tRCD-tRP)
Parameter
CAS Latency
tRCD
tRP
tRAS
tRC
DDR2-
800D
5-5-5
min
5
12.5
12.5
45
57.25
DDR2-
800E
6-6-6
min
6
15
15
45
60
DDR2-
667C
4-4-4
min
4
12
12
45
57
DDR2-667D DDR2-533C DDR2-400B Units
5-5-5
min
5
15
15
45
60
4-4-4
min
4
15
15
45
60
3-3-3
min
5
tCK
15
ns
15
ns
40
ns
55
ns
Rev. 0.6 / Oct. 2007
18