HYMD216M646DL6-D43 Datasheet, PDF (12/23 Pages) Hynix Semiconductor – 200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)

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200pin Unbuffered DDR SDRAM SO-DIMMs
CAPACITANCE (TA=25^oC, f=100MHz)
128MB: HYMD216M646D[L][P]6
Input/Output Pins
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE0, CKE1
/CS0, /CS1
CK0, /CK0, CK1, /CK1, CK2, /CK2
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
Symbol
Min
Max
Unit
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CI01
28
40
pF
28
40
pF
28
40
pF
28
40
pF
16
25
pF
7
12
pF
7
12
pF
256MB: HYMD232M646D[L][P]8
Input/Output Pins
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE0
/CS
CK0, /CK0, CK1, /CK1, CK2, /CK2
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
Symbol
Min
Max
Unit
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CI01
36
48
pF
36
48
pF
36
40
pF
36
40
pF
18
27
pF
7
12
pF
7
12
pF
256MB: HYMD232M646D[L][P]6
Input/Output Pins
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE0, CKE1
/CS0, /CS1
CK0, /CK0, CK1, /CK1, CK2, /CK2
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
Symbol
Min
Max
Unit
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CI01
36
48
pF
36
48
pF
28
40
pF
28
40
pF
18
27
pF
12
18
pF
12
18
pF
Rev.
1.1
/
May.
2005
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