HY62U8200B Datasheet, PDF (1/12 Pages) Hynix Semiconductor – 256K x8 bit 3.0V Low Power CMOS slow SRAM

Document Title
256K x8 bit 3.0V Low Power CMOS slow SRAM
Revision History
Revision No History
03
Initial Revision History Insert
Revised
- Improved operating current
Icc1 : 60mA => 30mA
04
Change the Notch Location of sTSOP
- Left-Top => Left-Center
05
Marking Information Add
Revised
- AC Test Condition Add : 5pF Test Load
- VIH max : Vcc + 0.2V => Vcc + 0.3V
06
Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
HY62U8200B Series
256Kx8bit CMOS SRAM
Draft Date
Jul.29.2000
Remark
Final
Sep.04.2000 Final
Dec.04.2000 Final
Apr.30.2001 Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 06 / Apr. 2001
Hynix Semiconductor