HY4N60T Datasheet, PDF (4/4 Pages) HY ELECTRONIC CORP. – 600V / 4.0A N-Channel Enhancement Mode MOSFET

HY4N60T / HY4N60FT
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
2.5
V_GS =10 V
I_D =2.0A
2.1
1.2
I_D = 250µA
1.1
1.7
1
1.3
0.9
0.9
0.5
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.7 On-Resistance
vs Junction Temperature
100
V_GS = 0V
10
T_J = 125^oC
1
25^oC
0.8
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.8 Breakdown Voltage
vs Junction Temperature
-55^oC
0.1
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Fig.9 Body Diode
Forward Voltage Characteristic
REV 1.0 : AUG. 2011
PAGE. 4