HY4N60T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 600V / 4.0A N-Channel Enhancement Mode MOSFET

HY4N60T / HY4N60FT
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
8
V_GS= 20V~ 8.0V
6
7.0V
10
V_DS =50V
6.0V
4
2
5.0V
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
1
T_J = 125^oC
25^oC
-55^oC
0.1
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V_GS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
0
V_GS=10V
V_GS = 20V
2
4
6
8
10
I_D - Drain Current (A)
8
I_D =2.0A
6
4
2
0
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
800
600
Ciss
400
f = 1MHz
V_GS = 0V
200
Coss
Crss
0
0
5
10 15 20 25 30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
12
I_D =4A
10
VDS=520V
8
VDS=325V
VDS=130V
6
4
2
0
0
4
8
12
16
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
REV 1.0 : AUG. 2011
PAGE. 3