HY4N60T Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 600V / 4.0A N-Channel Enhancement Mode MOSFET

HY4N60T / HY4N60FT
600V / 4.0A
N-Channel Enhancement Mode MOSFET
Features
• Low ON Resistance
• Fast Switching
• Low Gate Charge & Low C_RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
TYPE
MARKING PACKAGE
HY4N60T
4N60T
TO-220AB
HY4N60FT
4N60FT
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
600V, R_DS(ON)=2.4Ω@V_GS=10V, I_D=2.0A
1
GD23
S
TO-220AB
1
G _D23
S
ITO-220AB
2 Drain
1
Gatee
3 Source
Absolute Maximum Ratings (T_C=25^OC unless otherwise noted )
Parameter
S ymb o l HY4 N6 0 T
HY4 N6 0 F T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_C=2 5 ^OC
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
T_C=2 5 ^OC
Avalanche Energy with Single Pulse
I_AS=4A, VDD=90V, L=27.5mΗ
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
V_DS
V _GS
I_D
I_{D M}
P_D
E _AS
T_J,T_STG
600
+30
4
4
16
71
0.57
16
26
0.21
220
-55 to +150
Uni ts
V
V
A
A
W
mJ
O_C
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
PA RA ME TE R
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
S ym b o l
R_θJC
R_θJA
HY4 N6 0 T
1.76
62.5
HY4N60F T
4.8
100
Uni ts
O_{C /W}
O_{C /W}
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : AUG. 2011
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