HY125N10T Datasheet, PDF (4/4 Pages) HY ELECTRONIC CORP. – 100V / 125A N-Channel Enhancement Mode MOSFET

Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
200
1.2
I_D = 250mA
160
1.1
120
1
80
0.9
40
HY125N10T
0
0 25 50 75 100 125 150 175
T_J - Junction Temperature (^oC)
Fig.7 Power Derating Curve
0.8
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (^oC)
Fig.8 Breakdown Voltage vs Junction Temperature
1000
100
V_GS = 0V
10
T_J = 125^oC
1
0.1
25^oC
-55^oC
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Fig.9 Body Diode Forward Voltage Characteristic
REV.1, 8-May-2012
PAGE.4