HY125N10T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 100V / 125A N-Channel Enhancement Mode MOSFET

HY125N10T
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
200
8
V_GS= 10V~ 8.0V
V_GS=10V
160
7
7.0V
120
6
80
6.0V
5
40
5.0V
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
20
I_D =80A
16
12
8
4
0
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Gate to Source Voltage
12000
10000
8000
Ciss
f = 1MHz
V_GS = 0V
6000
4000
2000
Coss
Crss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV.1, 8-May-2012
4
3
0
20
40
60
80
100
I_D - Drain Current (A)
Fig.2 On-Resistance vs Drain Current
2.2
2
V_GS =10 V
I_D =80A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (^oC)
Fig.4 On-Resistance vs Junction Temperature
12
V_DS=50V
10
I_D =40A
8
6
4
2
0
0
40
80
120
160
200
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
PAGE.3