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| HY125N10T Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 100V / 125A N-Channel Enhancement Mode MOSFET | |||
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HY125N10T
Electrical Characteristics ( TC=25, Unless otherwise noted )
Parameter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0VãID=250uA
100
-
Gate Threshold Voltage
VGS(th)
VDS=VGSãID=250uA
2
3
Drain-Source On-State Resistance RDS(ON)
VGS=10VãID=80A
-
4.6
Zero Gate Voltage Drain Current IDSS
VDS=80VãVGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+20VãVDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=50Vï¼ID=40A
VGS=10V
-
178
-
32
-
45
Turn-On Delay Time
td(on)
-
31.8
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=50Vï¼ID=40A
-
19.2
td(off)
VGS=10Vï¼RG=3.6W
-
76
Turn-Off Fall Time
tf
-
52
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=30Vï¼VGS=0V
f=1.0MHZ
Reverse Transfer Capacitance
Crss
-
9200
-
680
-
320
Gate Resistance
Rg
-
1.3
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
Diode Forward Voltage
VSD
IS=80AãVGS=0V
-
0.86
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0VãIS=40A
Qrr
di/dt=100A/us
-
72
-
210
NOTE : Pulse Test : Pulse Width ⦠300us, duty cycle ⦠2%
Max.
-
4
5.8
1
100
-
-
-
-
-
-
-
-
-
-
-
120
1.4
-
-
Units
V
V
mW
uA
nA
nC
ns
pF
W
A
V
ns
uC
REV.1, 8-May-2012
PAGE.2
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