HY110N06T Datasheet, PDF (4/4 Pages) HY ELECTRONIC CORP. – 55V / 110A N-Channel Enhancement Mode MOSFET

HY110N06T
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
T_J - Junction Temperature (^oC)
Fig.7 Power Derating Curve
1.2
I_D = 250mA
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.8 Breakdown Voltage vs Junction Temperature
1000
100
V_GS = 0V
10
T_J = 125^oC
1
0.1
25^oC
-55^oC
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Fig.9 Body Diode Forward Voltage Characteristic
REV. 1, 11-May-2012
PAGE.4