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| HY110N06T Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 55V / 110A N-Channel Enhancement Mode MOSFET | |||
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HY110N06T
Electrical Characteristics ( TC=25, Unless otherwise noted )
Parameter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0VãID=250uA
55
-
Gate Threshold Voltage
VGS(th)
VDS=VGSãID=250uA
1
1.6
Drain-Source On-State Resistance RDS(ON)
VGS=10VãID=30A
-
4.2
Zero Gate Voltage Drain Current IDSS
VDS=44VãVGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+20VãVDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30Vï¼ID=30A
VGS=10V
-
98
-
37.6
-
26.2
Turn-On Delay Time
td(on)
-
21.8
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=30Vï¼ID=30A
-
12.6
td(off)
VGS=10Vï¼RG=3.6W
-
68
Turn-Off Fall Time
tf
-
58
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=30Vï¼VGS=0V
f=1.0MHZ
Reverse Transfer Capacitance
Crss
-
4150
-
385
-
260
Gate Resistance
Rg
-
1.3
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
Diode Forward Voltage
VSD
IS=30AãVGS=0V
-
0.85
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0VãIS=30A
Qrr
di/dt=100A/us
-
52
-
128
NOTE : Pulse Test : Pulse Width ⦠300us, duty cycle ⦠2%
Max.
-
3
5.5
1
100
-
-
-
-
-
-
-
-
-
-
-
110
1.4
-
-
Units
V
V
mW
uA
nA
nC
ns
pF
W
A
V
ns
uC
REV. 1, 11-May-2012
PAGE.2
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