HY110N06T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 55V / 110A N-Channel Enhancement Mode MOSFET

HY110N06T
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
200
180 10V
160
140
V_GS=7.0V
6.5V
120
100
6.0V
80
60
5.5V
40
5.0V
20
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
7
6
5
V_GS=10V
4
3
0
20
40
60
80
100
I_D - Drain Current (A)
Fig.1 Output Characteristric
Fig.2 On-Resistance vs Drain Current
12
2
10
I_D =30A
V_GS =10 V
1.8
I_D =30A
1.6
8
1.4
6
1.2
4
1
2
0.8
0
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
0.6
-50 -25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (^oC)
Fig.3 On-Resistance vs Gate to Source Voltage
Fig.4 On-Resistance vs Junction Temperature
6000
5000
4000
Ciss
f = 1MHz
V_GS = 0V
12
V_DS=30V
10
I_D =30A
8
3000
6
2000
1000
Coss
Crss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV. 1, 11-May-2012
4
2
0
0
20
40
60
80
100
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
PAGE.3