HY7N80T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 800V / 7A N-Channel Enhancement Mode MOSFET

HY7N80T / HY7N80FT
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
14
12
V_GS= 20V~ 8.0V
10
7.0V
10 ^{VDS =50V}
8
6.0V
T_J = 125^oC
25^oC
6
1
4
5.0V
2
-55^oC
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
0.1
123456789
V_GS - Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
3
2.5
2
1.5
V_GS=10V
1
V_GS = 20V
0.5
0
0
2
4
6
8
I_D - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
8
I_D =3.5A
6
4
2
0
10
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
Fig.4 On-Resistance vs Gate to Source Voltage
2000
1600
Ciss
1200
f = 1MHz
V_GS = 0V
800
400
Crss ^Coss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
12
I_D =7A
10
VDS=520V
VDS=325V
8
VDS=130V
6
4
2
0
0
4
8 12 16 20 24 28
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
REV 1.0, 25-Sept-2012
PAGE.3