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| HY7N80T Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 800V / 7A N-Channel Enhancement Mode MOSFET | |||
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HY7N80T / HY7N80FT
Electrical Characteristics ( TC=25â, Unless otherwise noted )
Paramter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0VãID=250uA
800
-
Gate Threshold Voltage
VGS(th)
VDS=VGSãID=250uA
2
-
Drain-Source On-State Resistance RDS(ON)
VGS=10VãID=3.5A
-
1.39
Zero Gate Voltage Drain Current IDSS
VDS=800VãVGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+30VãVDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=640Vï¼ID=7A
VGS=10V
-
26.8
-
7.6
-
8.3
Turn-On Delay Time
td(on)
-
28.2
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=400Vï¼ID=7A
-
72.8
td(off)
VGS=10Vï¼RG=25W
-
68.4
Turn-Off Fall Time
tf
-
32
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=25Vï¼VGS=0V
f=1.0MHZ
Reverse Transfer Capacitance
Crss
-
1150
-
120
-
6.5
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
Max. Pulsed Source Current
Diode Forward Voltage
ISM
-
VSD
IS=7AãVGS=0V
-
-
-
-
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0VãIS=7A
Qrr
di/dt=100A/us
-
195
-
0.62
Max.
-
4
1.65
1
+100
-
-
-
36.8
88
82.6
38.4
-
-
-
7
28
1.4
-
-
Units
V
V
W
uA
nA
nC
ns
pF
A
A
V
ns
uC
NOTE : Pulse Test : Pulse Width ⦠300us, duty cycle ⦠2%
REV 1.0, 25-Sept-2012
PAGE.2
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