HY7N80T Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 800V / 7A N-Channel Enhancement Mode MOSFET

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HY7N80T ^{0F.01I0G. 2S0IN–2.G2MLEAX0I.M4UM05.N6ON10-} / HY7N80FT
800V / 7A
N-Channel Enhancement Mode MOSFET
800V, R_DS(ON)=1.65W@V_GS=10V, I_D=3.5A
Features
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low C_RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
TO-220AB
1
2
3
ITO-220AB
12
3
2 Drain
Marking & Ordering Information
TYPE
MARKING PACKAGE PACKING
HY7N80T
7N80T
TO-220AB 50PCS/TUBE
HY7N80FT
7N80FT
ITO-220AB 50PCS/TUBE
1
Gate
3 Source
Absolute Maximum Ratings (T_C=25°C unless otherwise specified )
Parameter
Symbol HY7N80T
HY7N80FT
Drain-Source Voltage
V_DS
800
Gate-Source Voltage
V_GS
+30
Continuous Drain Current
T_C=25℃
I_D
7
7
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
T_C=25℃
Avalanche Energy with Single Pulse
I_AS=7A, V_DD=123V, L=18.5mH
Operating Junction and Storage Temperature Range
I_DM
P_D
E_AS
T_J, T_STG
28
28
147
50
1.23
0.4
450
-55 to +150
Note : 1. Maximum DC current limited by the package
Units
V
V
A
A
W
mJ
℃
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
R_qJC
R_qJA
HY7N80T
0.85
62.5
HY7N80FT
2.5
100
Units
V
V
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 25-Sept-2012
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