HY18N50W Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 500V / 18A N-Channel Enhancement Mode MOSFET

HY18N50W
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
50
V_GS= 20V~ 8.0V
40
30
7.0V
100
V_DS =50V
10
20
6.0V
10
5.0V
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
0.6
0.5
0.4
V_GS=10V
0.3
0.2
V_GS = 20V
0.1
T_J = 125^oC
1
25^oC
-55^oC
0
1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
2
I_D =9.0A
1.5
1
0.5
0
0
4
8
12
16
20
I_D - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
0
3
4
5
6
7
8
9 10
V_GS - Gate-to-Source Voltage (V)
Fig.4 On-Resistance vs Gate to Source Voltage
4000
3000
Ciss
2000
f = 1MHz
V_GS = 0V
12
I_D =18A
10
VDS=400V
VDS=250V
8
VDS=100V
6
1000
Coss
Crss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
4
2
0
0
10
20
30
40
50
60
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
REV. 1, 11-Jan-2012
PAGE.3