HY18N50W Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 500V / 18A N-Channel Enhancement Mode MOSFET

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500V / 18A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low C_RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-3PN Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
TYPE
MARKING PACKAGE PACKING
HY18N50W 18N50W
TO-3PN 30PCS/TUBE
HY18N50W ^{0F.01I0G. 2S0IN–2.G2MLEAX0I.M4UM05.N6ON10-}
500V, R_DS(ON)=0.32W@V_GS=10V, I_D=9A
TO-3PN
1
2
3
2 Drain
1
Gate
3 Source
Absolute Maximum Ratings (T_C=25°C unless otherwise specified )
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
T_C=25℃
I_D
I_DM
T_C=25℃
P_D
Avalanche Energy with Single Pulse
L=30mH, I_AS=8.6A, V_DS=140V
E_AS
Operating Junction and Storage Temperature Range
T_J, T_STG
Value
500
+30
18
72
200
1.6
1050
-55 to +150
Note : 1. Maximum DC current limited by the package
Units
V
V
A
A
W
mJ
℃
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Symbol
R_qJC
R_qJA
Value
0.62
40
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV. 1, 11-Jan-2012
PAGE.1