 English |
|
|
|
|
|
|
|
| HY18N50W Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 500V / 18A N-Channel Enhancement Mode MOSFET | |||
| |||
| ◁ |
Electrical Characteristics ( TC=25, Unless otherwise noted )
Paramter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0VãID=250uA
500
-
Gate Threshold Voltage
VGS(th)
VDS=VGSãID=250uA
2
-
Drain-Source On-State Resistance RDS(ON)
VGS=10VãID=9A
-
0.26
Zero Gate Voltage Drain Current IDSS
VDS=500VãVGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+30VãVDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
52.2
Qgs
VDS=400VãID=18A
VGS=10V
-
10.8
Qgd
-
14.8
Turn-On Delay Time
td(on)
-
21.8
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=250VãID=18A
-
36.8
td(off)
VGS=10VãRG=25W
-
88.2
Turn-Off Fall Time
tf
-
46
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=25VãVGS=0V
f=1.0MHZ
Reverse Transfer Capacitance
Crss
-
2250
-
320
-
7.4
Source-Drain Diode
Max. Diode Forwad Voltage
Max. Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
-
ISM
-
VSD
IS=18AãVGS=0V
trr
VGS=0VãIS=18A
Qrr
di/dt=100A/us
-
-
-
-
-
-
-
480
-
4.5
NOTE : Pulse Test : Pulse Width ⦠300us, duty cycle ⦠2%
HY18N50W
Max. Units
-
V
4
V
0.32
W
1.0
uA
+100
nA
-
-
nC
-
32
46
ns
112
66
2650
420
pF
12
18
A
72
A
1.5
V
-
ns
-
uC
REV. 1, 11-Jan-2012
PAGE.2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese