HWL32NPA Datasheet, PDF (3/4 Pages) Hexawave, Inc – L-Band GaAs Power FET

HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds= 3V, Ids= 550 mA
Po (dBm)
PAE (%)
40
80
30
20
Gain
10
60
Po
Gain
40
PAE
20
0
0
0.7
0.8
0.9
1.0
1.1 f (GHz)
Power Derating Curve
4
(25,2.8)
2
(150,0)
0
0
50
100
150
Case Temperature,T_C (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.