HWL32NPA Datasheet, PDF (2/4 Pages) Hexawave, Inc – L-Band GaAs Power FET

Typical Performance at 25_°C
HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V, I_DS=0.5I_DSS
Po (dBm)
40
PAE (%)
60
30
20
Gain
10
50
40
Po
Gain
30
Eff
20
10
0
0
0
5
10
15
20 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V, I_DS=0.5I_DSS
Po (dBm)
40
PAE (%)
60
30
20
Gain
10
50
Po
40
Gain
30
Eff
20
10
0
0
0
5
10
15
20
25 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.