HWL32NPA Datasheet, PDF (1/4 Pages) Hexawave, Inc – L-Band GaAs Power FET

Features
• ^{Plastic Packaged GaAs Power FET}
• ^{Suitable for Commercial Wireless}
Applications
• ^{High Efficiency}
• ^{3V Operation}
Description
The HWL32NPA is a medium Power GaAs FET using
surface mount type plastic package for various L-Band
applications. It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
Absolute Maximum Ratings
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D Drain Current
I_G Gate Current
T_CH Channel Temperature
T_STG
P_T*
Storage Temperature
Power Dissipation
* mounted on an infinite heat sink.
+7V
-5V
I_DSS
6 mA
150_°C
-65 to +150_°C
2.8 Watt
HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
1
213
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
PA Package (SOT-89)
Electrical Specifications (TA=25_°C) f=1900 MHz for all RF Tests
Symbol
I_DSS
V_P
gm
R_th
P_1dB
G_1dB
PAE
Parameters & Conditions
Saturated Current at V_DS=3V, V_GS=0V
Pinch-off Voltage at V_DS=3V, I_D=55mA
Transconductance at V_DS=3V, I_D=550mA
Thermal Resistance
Power Output at Test Points
V_DS=3V, I_D=0.5I_DSS
Gain at 1dB Compression Point
V_DS=3V, I_D=0.5I_DSS
Power-Added Efficiency (P_OUT = P_1dB)
V_DS=3V, I_D=0.5I_DSS
Units
mA
V
mS
°^C/W
dBm
dB
%
Min.
900
-3.5
400
-
27.5
-
-
Typ.
1100
-2.0
550
30
28.5
8.5
40.0
Max.
1500
-1.5
-
35
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.