XP152A12COMR Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET

20V P-Channel Enhancement Mode MOSFET
XP152A12COMR
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5
T_J = 150_C
T_J = 25_C
0.4
0.3
I_D = 2.8 A
0.2
0.1
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
0.0
0
2
4
6
V_GS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
Single Pulse Power
14
0.3
0.2
0.1
0.0
- 0.1
- 0.2
- 50
I_D = 250 mA
0
50
100
150
T_J - Temperature (_C)
12
10
8
6
4
2
0
0.01
T_C = 25_C
Single Pulse
0.10
1.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
8
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
10
30
JinYu
semiconductor
www.htsemi.com