XP152A12COMR Datasheet, PDF (3/4 Pages) Torex Semiconductor – Power MOS FET

20V P-Channel Enhancement Mode MOSFET
Output Characteristics^_
10
V_GS = 5, 4.5, 4, 3.5, 3 V
2.5 V
8
6
2V
4
2
0, 0.5, 1 V
1.5 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.5
0.4
0.3
V_GS = 2.5 V
0.2
V_GS = 4.5 V
0.1
0.0
0
2
4
6
8
10
I_D - Drain Current (A)
Gate Charge
5
V_DS = 6 V
I_D = 2.8 A
4
3
2
1
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
XP152A12COMR
Transfer Characteristics
10
T_C = - 55_C
8
25_C
6
125_C
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
1000
Capacitance
800
600
C_iss
400
C_oss
C_rss
200
0
0
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 4.5 V
I_D = 2.8 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
50
100
150
T_J - Junction Temperature (_C)
JinYu
semiconductor
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