XP152A12COMR Datasheet, PDF (2/4 Pages) Torex Semiconductor – Power MOS FET

20V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
1)
Drain-Source On-State Resistance
BV_DSS V_GS = 0V, I_D = -250uA
V_GS = -4.5V, I_D = -2.8A
R DS(on)
VGS = -2.5V, ID = -2.0A
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance¹⁾
Dynamic
V_GS(th)
I_DSS
I_GSS
g_fs
V_DS =V_GS, I_D = -250uA
V_DS = -20V, V _GS = 0V
VDS = -20V, V GS = 0V TJ=55^oC
V_GS = ± 8V, V_DS = 0V
V_DS = -5V, I_D = -2.8A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q_g
Q_gs
Qgd
td(on)
t_r
td(off)
tf
VDS = -6V, ID ^ -2.8A
V_GS = -4.5V
V_DD = -6V, RL=6Ω
I_D^ -1.A, V_GEN = -4.5V
RG = 6Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
Coss
Crss
V_DS = -6V, V_GS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = -1.6A, VGS = 0V
1) _{Pulse test: pulse width <= 300us, duty cycle<= 2%}
XP152A12COMR
Min.
Typ.
Max.
Unit
-20
V
105
130
mΩ
145
190
-0.45
V
-1
uA
-10
±100
nA
6.5
S
5.8
10
0.85
nC
1.7
13
25
36
60
ns
42
70
34
60
415
223
pF
87
-1.6
A
-0.8
-1.2
V
JinYu
semiconductor
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