H4946S Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 3/5
25
Ta=25℃
20
10V
6.0V
15
4.5V
10
3.0V
5
0
0
1
2
3
4
VDS,Drain-to-source Voltage(V)
Fig 1.Typical Output
50
46
42
38
34
30
3
5VGS,Gate-to-Sour7ce Voltage(V) 9
11
Fig 3.On-Resistance v.s.Gate Voltage
10
Tj=150
℃
1
Tj=25_℃
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse Diode
H4946DS & H4946DP
25
Ta=150℃
20
10V
6.0V
4.5V
15
10
3.0V
5
0
0
1
2
3
4
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output Characteristics
70
60
50
40
30
20
10
0
-50
0
50
100
150
200
Tj,Junction Temperature(℃)
Fig4.NormalizedOn-Resistance v.s.Junction
T
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj,Junction Temperature(℃)
Fig 6.Gate Threshold Voltage v.s.junction
HSMC Product Specification