H4946S Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)

HI-SINCERITY
MICROELECTRONICS CORP.
H4946 Series
N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 1/5
8-Lead Plastic DIP-8
Package Code: P
Features
• R_DS(on)<41mΩ@V_GS=10V, I_D=5.0A
• R_DS(on)<55mΩ@V_GS=4.5V, I_D=2.5A
•
1
2
3
4
8
76
5
8-Lead Plastic SO-8
Package Code: S
• Low On-resistance
H4946DS Symbol & Pin Assignment
• Fast Switching Speed
• SOP-8 Package
Description
5
6 _Q1
7
8 _Q2
4 ^{Pin 1: Source 2}
Pin 2: Gate 2
3 _{Pin 3: Source 1}
2 Pin 4: Gate 1
1 ^{Pin 5 / 6: Drain 1}
Pin 7 / 8: Drain 2
The Advanced Power MOSFETS provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness.
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
V_GS
ID@TA=25℃
ID@TA=70℃
I_DM
P_D
T_stg
T_j,
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current)
Continuous Drain Current
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
Storage Temperature Range
Operating Junction Temperature Range
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in² 2oz Cu PCB board
Ratings
60
±20
6.0
3.5
20
2.0
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
°C
°C
H4946DS & H4946DP
HSMC Product Specification