H4946S Datasheet, PDF (2/5 Pages) Hi-Sincerity Mocroelectronics – N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 2/5
Electrical Characteristics (T_A=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
• Static
BV_DSS
Drain-Source Breakdown Voltage
V_GS=0V, I_D=250uA
60
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
R_DS(on)
Drain-Source On-State Resistance
V_GS=10V, I_D=5.0A
V_GS=4.5V, I_D=2.5A
V_GS(th)
Gate Threshold Voltage
V_DS=V_GS, I_D=250uA
1
I_DSS
Zero Gate Voltage Drain Current (Tj=25°C) VDS=60V, VGS=0V
I_GSS
Gate-Body Leakage Current
V_GS=±20V, V_DS=0V
g_FS
Forward Transconductance
V_DS=10V, I_D=5.0A
• Drain-Source Diode Characteristics
V_SD
Drain-Source Diode Forward Voltage
V_GS=0V, I_S=1.6A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Typ.
0.06
7.0
Max. Unit
41
55
3
1
±100
V
V/℃
mΩ
V
uA
nA
S
1.2
V
H4946DS & H4946DP
HSMC Product Specification