H4435S Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 3/5
24
22 _Ta=25℃
20
18
16
14
12
10
8
6
4
2
0
-10V
-5.0V
-3.0V
0
1
2
3
4
VDS,Drain-to-source Voltage(V)
Fig 1.Typical Output Characteristics
-10V
25
-5.0V
T a=150_℃
20
-3.0V
15
10
5
0
0
1
2
3
4
5
6
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output Characteristics
25
22.5
ID=6.9A
T a=25_℃
20
17.5
15
2
4
6
8
10
12
VGS,Gate-to-Source Voltage(V)
Fig 3.On-Resistance v.s.Gate Voltage
25
20
15
ID=9.1A
VGS=10V
10
5
0
-50 -25 0 25 50 75 100 125 150
Tj,Junction Temperature(℃)
Fig 4.NormalizedOn-Resistance
v.s.Junction Temperature
10
T j=150
T j=25_℃
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse Diode
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
T j,Junction T emperature(℃)
Fig 6.Gate Threshold Voltage v.s.junction Temperature
H4435S
HSMC Product Specification