H4435S Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 1/5
H4435S
P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)
•
8-Lead Plastic SO-8
Package Code: S
Features
• R_DS(on)=20mΩ@V_GS=-10V, I_D=-9.1A
• R_DS(on)=35mΩ@V_GS=-4.5V, I_D=-6.9A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
H4435S Symbol & Pin Assignment
5
4
6
3 ^{Pin 1 / 2 / 3: Source}
Pin 4: Gate
7
2 _{Pin 5 / 6 / 7 / 8: Drain}
8
1
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current (Continuous)
I_DM
Drain Current (Pulsed) ^*1
P_D
Total Power Dissipation @T_A=25^oC
T_j, T_stg
R_θJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)^*2
*1: Maximum DC current limited by the package
*2: 1-in² 2oz Cu PCB board
Ratings
-30
±20
-9.1
-50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
H4435S
HSMC Product Specification