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H4435S Datasheet, PDF (2/5 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)
◁
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 2/5
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
• Static
BVDSS
Characteristic
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
gFS
Forward Transconductance
• Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
• Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
Test Conditions
VGS=0V, ID=-250uA
VGS=-10V, ID=-9.1A
VGS=-4.5V, ID=-6.9A
VDS=VGS, ID=-250uA
VDS=-30V, VGS=0V
VGS=±20V, VDS=0V
VDS=-10V, ID=-9.1A
VDS=-24V, ID=-7.0A, VGS=-4.5V
VDS=-25V, VGS=0V, f=1MHz
VDD=-15V, RL=15Ω, ID=-1A,
VGEN=-10V, RG=3.3Ω
VGS=0V, IS=-2.1A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Min. Typ. Max. Unit
30
-
-
V
-
15
20
mΩ
-
20
35
-1
-
-3
V
-
-
-1
uA
-
-
±100 nA
21
-
S
-
20
30
-
3.43
-
nC
-
11
-
-
1210 1720-
-
205
-
PF
-
195
-
-
10
-
-
7.0
-
Ns
-
45
-
-
35
-
-
-
-2.1
A
-
-
-1.2
V
H4435S
HSMC Product Specification
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