H2305N Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-20V, -4.5A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 3/5
Characteristics Curve
30
Ta=25_℃
25
20
15
-5V
-4V
-3V
-2 V
10
-1.5V
5
0
0
2
4
6
8
VDS,Drain-to-source Voltage(V)
Fig 1.Typical Output
70
65
60
ID=4.2A
55
T a=25_℃
50
45
40
1
2
3
4
5
6
VGS,Gate-to-Source Voltage(V)
Fig 3.On-Resistance v.s.Gate
30
T a=150_℃
25
20
15
10
5
0
0
2
4
6
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output
Ch
ii
-5V
-4V
-3V
-2V
-1.5V
8
80
70
60
ID=-4.2A
50
VGS=-4.5V
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
Tj,Junction Temperature(℃)
Fig 4.Normalized On-Resistance v.s.Junction
10
T j=150_℃
T j=25_℃
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse
H2305N
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -25 0 25 50 75 100 125 150 175
Tj,Junction Temperature(℃)
Fig 6.Gate Threshold Voltage
HSMC Product Specification