H2305N Datasheet, PDF (2/5 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-20V, -4.5A)

HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (T_A=25°C, unless otherwise noted)
Symbol
• Static
BV_DSS
Characteristic
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient
R_DS(on)
Drain-Source On-State Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current (Tj=25oC)
Zero Gate Voltage Drain Current (Tj=55oC)
I_GSS
Gate-Body Leakage Current
g_FS
Forward Transconductance
• Drain-Source Diode Characteristics
V_SD
Drain-Source Diode Forward Voltage
Test Conditions
V_GS=0V, I_D=-250uA
Reference to 25℃,
ID=-1mA
V_GS=-4.5V, I_D=-2.8A
V_GS=-2.5V, I_D=-2A
V_GS=-1.8V, I_D=-1A
V_DS=V_GS, I_D=-250uA
V_DS=-20V, V_GS=0V
V_DS=-16V, V_GS=0V
V_GS=±8V, V_DS=0V
V_DS=-5V, I_D=-2.8A
V_GS=0V, I_S=-1.2A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 2/5
Min. Typ. Max. Unit
-20
-
-
V
-0.1
V/℃
-
58
71 mΩ
-
108
-0. 45
V
-
-1
uA
-
-10 uA
-
-
±100 nA
-
9.0
-
S
-
-
-1.2
V
H2305N
HSMC Product Specification