H2305N Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-20V, -4.5A)

HI-SINCERITY
MICROELECTRONICS CORP.
H2305N
P-Channel Enhancement-Mode MOSFET (-20V, -4.5A)
Features
• R_DS(on)<58mΩ@V_GS=-4.5V, I_D=-4.2A
• R_DS(on)<71mΩ@V_GS=-2.5V, I_D=-2A
• Simple Drive Requirement
• Small Package Outline
• ISurface Mount Device
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 1/5
H2305N Pin Assignment & Symbol
3
12
3-Lead Plastic SOT-23
Package Code: N
Pin 1: Gate 2: Source 3: Drain
Source
Gate
Drain
Description
The Advanced Power MOSFETS from APEC provide the designer with the best combination of fast switching
low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for
low voltage, applications such as DC/DC converters.
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
V_GS
ID@TA=25℃
ID@TA=70℃
I_DM
P_D
T_stg
T_j,
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current)
Continuous Drain Current
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
Storage Temperature Range
Operating Junction Temperature Range
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in² 2oz Cu PCB board
Ratings
-20
±8
-4.5
-3.5
-10
1.38
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
°C
°C
H2305N
HSMC Product Specification