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H3055LJ Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (20V, 13A)
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HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
• Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
gFS
Forward Transconductance
• Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
• Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS=0V, ID=250uA
VGS=2.5V, ID=5.2A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=20V, VGS=0V
VGS=±12V, VDS=0V
VDS=10V, ID=6A
VDS=10V, ID=6A, VGS=4.5V
VDS=8V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
RGEN=6Ω
VGS=0V, IS=1.7A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Spec. No. : MOS200606
Issued Date : 2006.03.01
Revised Date : 2006.05.04
Page No. : 2/4
Min. Typ. Max. Unit
20
-
-
V
-
34
45
mΩ
-
25
35
0.6
-
1.5
V
-
-
1
uA
-
-
±100 nA
7
13
-
S
-
4.86
-
-
0.92
-
nC
-
1.4
-
-
562
-
-
106
-
pF
-
75
-
-
8.1
-
-
9.95
-
ns
- 21.85 -
-
5.35
-
-
-
1.7
A
-
-
1.2
V
VGEN
Switching
Test Circuit
VDD
RD
VIN
D
VOUT
RG
G
S
td(on)
ton
Switching
Waveforms
tr
90%
td(off)
toff
tf
90%
Output, VOUT
10%
Input, VIN
10%
50%
10%
Inverted
90%
50%
Pulse Width
H3055LJ
HSMC Product Specification
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