H3055LJ Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (20V, 13A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200606
Issued Date : 2006.03.01
Revised Date : 2006.05.04
Page No. : 1/4
H3055LJ
N-Channel Enhancement-Mode MOSFET (20V, 13A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
H3055LJ Pin Assignment
Tab
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
3
2
1
Pin 2 & Tab: Drain
Pin 3: Source
D
Internal Schematic
Diagram
G
S
Features
• R_DS(on)=45mΩ@V_GS=2.5V, I_D=5.2A; R_DS(on)=35mΩ@V_GS=4.5V, I_D=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
Applications
• Battery Protection
• Load Switch
• Power Management
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
R_θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
Total Power Dissipation @T_A=75^oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient^*2
*1: Maximum DC current limited by the package
*2: 1-in² 2oz Cu PCB board
Ratings
20
±12
13
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
°C
°C/W
H3055LJ
HSMC Product Specification