HBFP0420 Datasheet, PDF (6/10 Pages) Agilent(Hewlett-Packard) – High Performance Isolated Collector Silicon Bipolar Transistor

6
HBFP-0420 Die Model and PSPICE Parameters
C
XX
CMP2
DIODE
CMP9
R
CMP5
C
R =12 OH
C = 19E-3 pF
AREA=
REGION=
MODEL = DBC
TEMP=
CMP7
R
CMP1
NPNBJTSUBST
CMP3
DIODE
B
R=7.78 OH
C =7E-3 pF
CMP6
C
CMP16
DIODE
AREA=3
REGION=
MODEL=BJTMODEL
TEMP=
MODEL=DBE
REGION=
AREA=
CMP8
R
R=.194 OH
CMP69
R
CMP68
BITMODELFORM
XX R-1 OH
E
NPN=yes
PNP=
# BJT MODEL #
MODEL = BJTMODEL
Forward Reverse D i o d e a n d j u n c t i o n
P a r a s i t i c s Noise
BF=1E6
BR=1
EG=1.17 CJC=2.7056E-14 RB=9.30144818 KF=
IKE=1.4737E-1 IKR=1.1E-2 IS=4.4746E-18 VJC=.6775 IRB=3.029562E-6 AF=
ISE=7.094E-20 ISC=
IMAX=
MJC=0.3319 RBM=.1
KB=
NE=1.006
NC=2
XTI=3 XCJC=4.39790997E-1 RE=
AB=
VAF=4.4E1
VAR=3.37 ^TNOM=21
FC=0.8
RC=
FB=
NF=1
NR=1.005
TF=5.3706E-12 TR=4E-9
CJE=7.474248E-14
XTF=20
VTF=0.8
ITF=2.21805486E-1
PTF=22
XTB=0.7
APPROXOB=yes
Substrate
IS5=
NS=
VJE=0.9907
MJE=0.5063
CJS=
VJS=
MJS=
CMP10
DIODEMODELFORM
# DIODE MODEL #
MODEL = DBC
IS=I.40507E-17 RS=
ISR=
BV=
CJO=2.393E-14 NR=
IBV=
TT=
IKF=
IMAX=
EG=
NBV=
XTI=
VJ=0.729
IBVL=
TNOM=21 M=0.44
NBVL=
KF=
N=1
FFE=
AF=
FC=0.8
AREA=
REGION=
MODEL=DCS
TEMP=
CMP12
DIODEMODELFORM
# DIODE MODEL #
MODEL = DCS
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
RS=2.17347E2 ISR=
CJO=8.974E-14 NR=
TT=
IKF=
EG=
NBV=
VJ=0.6
IBVL=
M=0.42
NBVL=
N=
FFE=
FC=0.8
CMP11
DIODEMODELFORM
# DIODE MODEL #
MODEL = DCE
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
RS=
ISR=
CJO=2.593E-14 NR=
TT=
IKF=
EG=
NBV=
VJ=0.8971
IBVL=
M=2.292E-1 NBVL=
N=1.0029
FFE=
FC=0.8
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more
precise and accurate design, please refer to the measured data in this data sheet.
Note: The value of beta was high (BF = 1E6) to compensate for the fact that diode DBE reduces the current going into the
base (current flows through DBE). The diodes are necessary to model the non-linear effects.