HBFP0420 Datasheet, PDF (4/10 Pages) Agilent(Hewlett-Packard) – High Performance Isolated Collector Silicon Bipolar Transistor

4
HBFP-0420 Typical Scattering Parameters,
V_CE = 2 V, I_C = 15 mA, T_C = 25°C
Freq.
S₁₁
S₂₁
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.481 -22.1 29.1 28.438 166.1
0.5
0.437 -91.4 26.0 19.969 124.7
0.9
0.416 -131.0 22.6 13.526 101.9
1.0
0.414 -138.0 21.9 12.378 97.8
1.5
0.415 -163.4 18.7
8.619 81.9
1.8
0.418 -174.6 17.2
7.254 74.2
2.0
0.421 178.9 16.3
6.549 69.7
2.5
0.428 165.4 14.4
5.262 59.3
3.0
0.435 153.6 12.9
4.418 49.9
3.5
0.439 143.2 11.6
3.811 41.0
4.0
0.442 133.3 10.5
3.362 32.4
4.5
0.447 123.7
9.6
3.024 23.9
5.0
0.455 114.1
8.8
2.749 15.4
5.5
0.467 104.6
8.0
2.522
6.8
6.0
0.484 95.5
7.3
2.327 -1.8
6.5
0.504 86.0
6.7
2.163 -10.4
7.0
0.527 76.7
6.1
2.014 -18.9
7.5
0.552 68.0
5.5
1.880 -27.4
8.0
0.572 60.4
4.9
1.765 -35.5
8.5
0.590 53.3
4.4
1.658 -43.6
9.0
0.604 46.4
3.9
1.565 -51.6
9.5
0.616 39.2
3.4
1.484 -59.6
10.0
0.630 31.4
3.0
1.406 -67.7
dB
-43.0
-31.2
-28.2
-27.7
-25.5
-24.4
-23.7
-22.3
-21.0
-19.9
-18.9
-18.1
-17.3
-16.6
-16.0
-15.4
-14.9
-14.5
-14.1
-13.8
-13.4
-13.1
-12.9
S₁₂
Mag
0.007
0.027
0.039
0.041
0.053
0.060
0.065
0.077
0.089
0.101
0.113
0.125
0.137
0.148
0.159
0.169
0.179
0.188
0.197
0.205
0.213
0.221
0.228
Ang
82.3
60.7
53.4
52.9
49.6
47.9
46.6
42.9
38.8
34.1
29.0
23.7
17.9
11.8
5.4
-1.0
-7.6
-14.3
-20.6
-27.1
-33.6
-40.3
-47.2
S₂₂
Mag
Ang
0.959
0.702
0.500
0.465
0.341
0.292
0.269
0.226
0.196
0.177
0.163
0.152
0.138
0.120
0.100
0.077
0.059
0.060
0.077
0.096
0.112
0.123
0.134
-10.5
-41.4
-57.2
-59.6
-69.8
-74.4
-77.6
-84.1
-91.1
-96.8
-102.1
-107.2
-113.4
-121.1
-131.4
-148.2
-178.2
144.1
116.6
100.7
89.0
77.9
66.5
HBFP-0420 Noise Parameters: V_CE = 2 V, I_C = 15 mA
Freq.
F_min
Γ_opt
R_N/50
G_a
GHz
dB
Mag
Ang
Ω
dB
0.9
1.57
0.033 -135.5
8.0
23.88
1.0
1.58
0.054 -151.8
7.8
23.04
1.5
1.63
0.169 -155.2
6.7
19.79
1.8
1.67
0.252 -148.1
6.3
18.34
2.0
1.74
0.234 -158.3
6.4
17.52
2.5
1.72
0.306 -149.2
6.1
15.71
3.0
1.76
0.343 -142.2
6.5
14.24
3.5
1.84
0.365 -133.5
7.7
12.97
4.0
1.89
0.383 -124.4
9.4
11.89
4.5
1.97
0.407 -115.6
11.5
11.01
5.0
2.03
0.431 -106.3
14.1
10.22
5.5
2.15
0.463
-96.8
17.8
9.53
6.0
2.28
0.483
-87.3
22.9
8.89
6.5
2.36
0.513
-77.3
28.7
8.32
7.0
2.42
0.538
-67.8
35.5
7.79
7.5
2.54
0.560
-59.2
43.0
7.30
8.0
2.65
0.581
-51.4
51.7
6.85
8.5
2.83
0.602
-44.6
61.3
6.42
9.0
2.96
0.621
-37.2
71.0
5.99
9.5
3.10
0.640
-29.9
81.1
5.61
10.0
3.14
0.653
-21.8
90.5
5.23
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.