HBFP0420 Datasheet, PDF (3/10 Pages) Agilent(Hewlett-Packard) – High Performance Isolated Collector Silicon Bipolar Transistor

3
HBFP-0420 Typical Scattering Parameters,
V_CE = 2 V, I_C = 5 mA, T_C = 25°C
Freq.
S₁₁
S₂₁
GHz
Mag
Ang
dB
Mag Ang
0.1
0.746 -11.9 23.4 14.853 171.0
0.5
0.682 -55.6 21.9 12.473 139.8
0.9
0.607 -90.1 19.9 9.909 116.8
1.0
0.585 -97.5 19.3 9.181 112.2
1.5
0.532 -128.3 16.8 6.918 93.1
1.8
0.512 -143.1 15.5 5.952 83.4
2.0
0.502 -151.6 14.7 5.453 78.4
2.5
0.490 -169.8 12.9 4.422 65.8
3.0
0.483 -174.6 11.6 3.786 55.2
3.5
0.480 161.4 10.3 3.286 45.2
4.0
0.479 149.2
9.3
2.908 35.7
4.5
0.482 137.6
8.4
2.629 26.5
5.0
0.487 126.5
7.6
2.389 17.4
5.5
0.497 115.4
6.9
2.205
8.3
6.0
0.513 105.0
6.2
2.040 -0.8
6.5
0.532 94.6
5.6
1.902 -9.8
7.0
0.553 84.0
5.0
1.778 -18.7
7.5
0.575 74.5
4.4
1.662 -27.5
8.0
0.592 66.0
3.9
1.559 -36.1
8.5
0.609 58.2
3.3
1.469 -44.4
9.0
0.623 50.7
2.9
1.393 -52.6
9.5
0.635 43.0
2.4
1.312 -60.8
10.0
0.648 34.5
1.9
1.248 -69.1
dB
-41.4
-28.5
-25.0
-24.5
-22.9
-22.3
-21.9
-21.2
-20.5
-19.8
-19.2
-18.5
-17.9
-17.3
-16.8
-16.3
-15.8
-15.3
-14.9
-14.6
-14.2
-13.9
-13.6
S₁₂
Mag
0.009
0.038
0.056
0.059
0.072
0.077
0.080
0.088
0.095
0.102
0.110
0.118
0.127
0.136
0.145
0.153
0.162
0.171
0.179
0.186
0.195
0.202
0.209
Ang
84.8
63.6
49.3
46.9
37.2
33.2
31.2
26.9
23.4
19.8
16.3
12.5
8.1
3.5
-1.5
-7.1
-12.6
-18.2
-24.0
-29.8
-35.4
-41.6
-48.0
S₂₂
Mag
Ang
0.985
0.861
0.696
0.661
0.516
0.450
0.419
0.359
0.314
0.286
0.266
0.248
0.233
0.209
0.189
0.161
0.134
0.115
0.110
0.113
0.120
0.127
0.130
-6.6
-29.4
-46.6
-49.3
-62.2
-67.7
-71.6
-78.4
-86.3
-92.5
-98.1
-104.1
-110.5
-117.9
-126.4
-137.1
-152.0
-171.2
167.1
147.2
130.6
118.0
103.9
HBFP-0420 Noise Parameters: V_CE = 2 V, I_C = 5 mA
Freq.
F_min
Γ_opt
R_N/50
GHz
dB
Mag
Ang
Ω
0.9
1.00
0.281
28.8
9.6
1.0
1.02
0.266
36.6
9.2
1.5
1.10
0.187
68.3
7.6
1.8
1.14
0.175
94.1
6.8
2.0
1.18
0.154
118.4
6.1
2.5
1.25
0.184
146.5
5.4
3.0
1.32
0.226
165.9
5.0
3.5
1.39
0.254
-176.8
4.9
4.0
1.49
0.292
-162.3
5.0
4.5
1.58
0.312
-147.3
6.0
5.0
1.63
0.355
-135.5
6.8
5.5
1.75
0.375
-121.0
9.3
6.0
1.88
0.416
-108.5
12.3
6.5
1.94
0.453
-98.1
15.8
7.0
2.05
0.486
-84.4
21.4
7.5
2.15
0.506
-74.8
26.8
8.0
2.23
0.532
-65.0
33.6
8.5
2.47
0.556
-56.8
41.7
9.0
2.59
0.589
-48.4
50.4
9.5
2.63
0.610
-40.4
58.2
10.0
2.74
0.624
-31.0
68.3
G_a
dB
22.19
21.39
18.30
16.92
16.21
14.34
13.00
11.79
10.79
9.95
9.22
8.55
7.99
7.47
6.99
6.49
6.04
5.65
5.32
4.91
4.56
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.