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HMMC-5618 Datasheet, PDF (5/6 Pages) Agilent(Hewlett-Packard) – 6-20 GHz Amplifier
HMMC-5618 Typical Performance
20 VD2 = 5.0 V, VG1 = VG2 = Open
0
Gain
VD1 = 3.0 V
10
15
VD1 = 5.0 V
20
10
Spec Range
30
5.9 – 20 GHz
5
40
Isolation
0
50
2
6
10
14
18
22
FREQUENCY (GHz)
Figure 2. Gain and Isolation vs.
Frequency.[1]
0 VD1 = VD2 = 5.0 V, VG1 = VG2 = Open
0
Spec Range
5.9 – 20 GHz
5
5
Output
10
10
15
15
Input
20
20
25
25
2
6
10 14
18
22
FREQUENCY (GHz)
Figure 3. Input and Output Return
Loss vs. Frequency.[1]
20 VD1 = VD2 = 5.0 V, VG1 = VG2 = Open
0
Spec Range
5.9 – 20 GHz
10
15
Gain
Wafer-Probed
20
10
Includes 0.2 nH Measurements
wire inductance
30
5
40
Isolation
0
50
2
6
10
14
18
22
FREQUENCY (GHz)
Figure 4. Effects of Input/Output Bond
Wire Inductance on Gain and
Isolation.[2]
10 VD1 = VD2 = 5.0 V, VG1 = VG2 = Open
Spec Range
5.9 – 20 GHz
8
6
4
2
0
4
8
12
16
20
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.[1]
0 VD1 = VD2 = 5.0 V, VG1 = VG2 = Open
Spec Range
5.9 – 20 GHz
5
Wafer-Probed
Measurements
10
0 VD1 = VD2 = 5.0 V, VG1 = VG2 = Open
Spec Range
5.9 – 20 GHz
5
Wafer-Probed
Measurements
10
15
15
20
Includes 0.2 nH
wire inductance
25
2
6
10
14
18
22
FREQUENCY (GHz)
Figure 6. Effects of Input/ Output
Bond Wire Inductance on Input Return
Loss.[2]
20
Includes 0.2 nH
wire inductance
25
2
6
10 14
18
22
FREQUENCY (GHz)
Figure 7. Effects of Input/Output Bond
Wire Inductance on Output Return
Loss.[2]
Notes:
1. Wafer-probed measurements.
2. Effect of 0.2 nH inductance in the RF input and RF output bond wires is modeled from measured
wafer-probe tests calibrated at the pads of the MMIC device.
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