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HMMC-5618 Datasheet, PDF (2/6 Pages) Agilent(Hewlett-Packard) – 6-20 GHz Amplifier
HMMC-5618 DC Specifications/Physical Properties[1]
Symbol Parameters and Test Conditions
Units Min. Typ. Max.
VD1, VD2 Drain Supply Voltage
V
3.0
5.0
5.5
ID1
Stage-One Drain Supply Current
(VD1 = 5 V , VG1 = Open or Ground)
mA
50
ID2
Stage-Two Drain Supply Current
(VD2 = 5 V , VG2 = Open or Ground)
mA
65
ID1 + ID2 Total Drain Supply Current
mA
(VD1 = VD2 = 5 V, VG1 = VG2 = Open or Ground)
115
140
VP1
Optional Input-Stage Gate Supply Pinch-off Voltage
(VD1 = 5 V , ID1 < 3 mA: Input Stage OFF[2])
IG1
Gate Supply Current (Input Stage OFF[2])
V
-4
-2.8
mA
0.9
VP2
Optional Input-Stage Gate Supply Pinch-off Voltage
(VD2 = 5 V , ID2 < 3.6 mA: Output Stage OFF[2])
V
-7.5
-5.3
IG2
Gate Supply Current (Output Stage OFF[2])
mA
1.7
(VD2 = 5 V , VG2 = Open or Ground)
θch-bs
Thermal Resistance[3]
°C/Watt
87
(Channel-to-Backside at Tch = 150°C)
Tch
Channel Temperature[4] (TA = 100°C, MTTF = 106 hrs,
°C
150
VD1 = VD2 = 5 V, VG1 = VG2 = Open)
Notes:
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. The specified FET stage is in the OFF state when biased with a gate voltage level that is sufficient to pinch off the drain
current.
3. Thermal resistance (in °C/Watt) at a channel temperature T (°C) can be estimated using his equation:
θ (T)≅ 87 x [T(°C)+ 273] / [150°C+ 273].
4. Derate MTTF by a factor of two for every 8°C above Tch.
HMMC-5618 RF Specifications, TA = 25°C, VD1 = VD2 = 5 V, VG1 = VG2 = Open or Ground, ZO = 50 Ω
6–18 GHz 5.9–20 GHz
Symbol
Parameters and Test Conditions
Units Typ. Min. Max. Min. Max.
Gain Small Signal Gain
dB
14 12
11.5
∆ Gain Gain Flatness
dB ± 0.5
∆S21/∆T
(RL in)MIN
(RL out) MIN
Isolation
Temperature Coefficient of Gain
Minimum Input Return Loss
Minimum Output Return Loss
Reverse Isolation
dB/°C -0.025
dB
12 10
9
dB
12 10
10
dB
40
P-1dB
Psat
NF
Output Power @ 1 dB Gain Compression
Saturated Output Power (Pin = 10 dBm)
Noise Figure
dBm 18 17
17
dBm 20 18.5
18.5
dB
5.5
7
7
6-65