HMMC-5025 Datasheet, PDF (3/7 Pages) Agilent(Hewlett-Packard) – 2 - 50 GHz Distributed Amplifier

HMMC-5025 Applications
The HMMC-5025 traveling wave
amplifier is designed for use as a
general purpose wideband power
stage in communication systems
and microwave instrumentation.
It is ideally suited for broadband
applications requiring a flat gain
response and excellent port
matches over a 2 to 50 GHz
frequency range. Dynamic gain
control and low-frequency
extension capabilities are
designed into these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V_DD) and a single negative gate
supply (V_G1). The recommended
bias conditions for best perfor-
mance for the HMMC-5025 are
V_DD = 5.0 V, I_DD = 75 mA. To
achieve these drain current
levels, V_G1 is typically biased
between -0.2V and -0.6 V. No other
bias supplies or connections to
the device are required for 2 to
50␣ GHz operation. The gate
voltage (V_G1) should be applied
prior to the drain voltage (V_DD)
during power up and removed
after the drain voltage during
power down.
The auxiliary gate and drain
contacts are used only for low-
frequency performance extension
below ≈ 1.0 GHz. When used,
these contacts must be AC
coupled only. (Do not attempt to
apply bias to these pads.)
The second gate (V_G2) can be
used to obtain 30 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 mil diameter Au wire is
recommended for all bonds. Tool
force should be 22 ± 1 gram, stage
temperature should be 150 ± ␣ 2 °C,
and ultrasonic power and dura-
tion should be 64 ± 1 dB and
76␣ ± ␣ 8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see HP application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Low Frequency Drain
Extension Bias
15 50
15
1.5
8.5
470
340
RF INPUT
Seven Identical Stages
GND
Figure 1. HMMC-5025 Schematic.
RF OUTPUT
350
Gate
Bias
8.5
Second Gate
Bias
50 ₆
9.2
Low Frequency
Extension
6-42