HMMC-5025 Datasheet, PDF (1/7 Pages) Agilent(Hewlett-Packard) – 2 - 50 GHz Distributed Amplifier

2 – 50 GHz Distributed Amplifier
Technical Data
HMMC-5025
Features
• Frequency Range: 2 – 50 GHz
• Small Signal Gain: 8.5 dB
• P_-1dB @ 40 GHz: 12 dBm
• Noise Figure:
< 6 dB @ 2 – 35 GHz
< 10 dB @ 35 – 50 GHz
• Return Loss: In/Out: < -10 dB
Description
The HMMC-5025 was designed as
a generic wide band distributed
amplifier, covering the frequency
span 2 – 50 GHz. It consists of
seven stages. Each stage is made
up of two cascoded FETs with
gate peripheries of 48 mm per
FET. Both input and output ports
were designed to provide 50 ohm
terminations. Bonding pads are
provided in the layout to allow
amplifier operation at frequencies
lower than 2 GHz by means of
external circuit components.
The HMMC-5025 is typically
biased at V_DD = 5 volts and
I_DD␣ =␣ 75 mA. The second gate is
internally biased by means of a
voltage divider network and an
a.c. ground.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1720 x 920 µm (67.7 x 36.2 mils)
± 10µm (± 0.4mils)
127 ± 15 µm (5.0 ± 0.6 mils)
80 x 80 µm (3.2 x 3.2 mils)
Absolute Maximum Ratings^[1]
Symbol Parameters/Conditions
Units Min. Max.
V_DD
Positive Drain Voltage
V
7.0
I_DD
Total Drain Current
mA
170
V_G1
First Gate Voltage
V
-3.5
0
V_G2
Second Gate Voltage
mA -3.0 +3.0
P_DC
DC Power Dissipation
watts
1.2
P_in
T_ch
T_case
T_STG
CW Input Power
Operating Channel Temp.
Operating Case Temp.
Storage Temperature
dBm
20
°C
+150
°C
-55
°C
-65 +165
T_max
Maximum Assembly Temp.
(for 60 seconds maximum)
°C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T_A = 25°C except for T_ch, T_STG, and T_max.
5965-5446E
6-40